SiA421DJ
Vishay Siliconix
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
25
20
20
15
15
Package Limited
10
10
5
0
5
0
0
25
50
75
100
125
150
25
50
75
100
125
150
T C - Case Temperat u re (°C)
Current Derating*
T C - Case Temperat u re (°C)
Power Derating
* The power dissipation P D is based on T J(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package
limit.
Document Number: 73975
S12-1959-Rev. E, 13-Aug-12
www.vishay.com
5
This document is subject to change without notice.
THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
相关PDF资料
SIA432DJ-T1-GE3 MOSFET N-CH 30V 12A SC70-6
SIA443DJ-T1-GE3 MOSFET P-CH 20V 9A SC70-6
SIA448DJ-T1-GE3 MOSFET N-CH 20V D-S SC70-6L
SIA461DJ-T1-GE3 MOSFET P-CH 20V 12A SC706L
SIA511DJ-T1-GE3 MOSFET N/P-CH 12V PWRPAK SC70-6
SIA513DJ-T1-GE3 MOSFET N/P-CH 20V PWRPAK SC70-6
SIA533EDJ-T1-GE3 MOSFET N/P-CH 12V 4.5A SC70-6
SIA777EDJ-T1-GE3 MOSFET N/P-CH 20V PPAK SC70-6L
相关代理商/技术参数
SIA421DJ-T4-GE3 制造商:Vishay Intertechnologies 功能描述:
SIA425EDJ-T1-GE3 功能描述:MOSFET 20V 4.5A 15.6W 60mOhms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA426DJ 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:N-Channel 20-V (D-S) MOSFET
SIA426DJ-T1-GE3 功能描述:MOSFET 20V 4.5A 19W 23.6mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA427DJ-T1-GE3 功能描述:MOSFET 8V 12A 19W 13mohms @ 4.5V RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
SIA429DJT 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SIA429DJT_11 制造商:VISHAY 制造商全称:Vishay Siliconix 功能描述:P-Channel 20 V (D-S) MOSFET
SIA429DJT-T1-GE3 功能描述:MOSFET P-Channel 20 V (D-S) RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube